bfy450 ifag imm rpd d hir 1 of 4 v2, february 2011 hirel npn silicon rf transistor ? hirel discrete and microwave semiconductor ? for medium power amplifiers ? compression point p - 1db =19dbm 1.8 ghz max. available gain g ma = 16db at 1.8 ghz ? hermetically sealed microwave package ? transition frequency f t = 20 ghz ? sieget ? g rounded e mitter t ransistor - 25 ghz f t - line ? space qualified esa/scc detail spec. no.: 5611/008 type variant no. 03 esd : e lectro s tatic d ischarge sensitive devi ce, observe handling precautions! type marking ordering code pin configuration 1 2 3 4 package bfy450 (ql) - see below c e b e micro - x (ql) quality level: p: professional quality h: high rel quality s: space quality es: esa spac e quality (see order instructions for ordering example) 1 2 3 4
bfy450 ifag imm rpd d hir 2 of 4 v2, february 2011 maximum ratings parameter symbol values unit collector - emitter voltage v ceo 4.5 v collector - base voltage v cbo 15 v emitter - base voltage v ebo 1.5 v collector current i c 100 ma base current i b 10 ma total power dissipation, t s ? 110c 1), 2) p tot 450 mw junction temperature t j 175 ? c operating temperature range t op - 65...+175 ? c storage temperature range t stg - 65.. .+175 ? c thermal resistance junction - soldering point 2) r th js < 145 k/w notes.: 1) at t s = + 110 c. for t s > + 110 c derating is required. 2) t s is measured on the collector lead at the soldering point to the pcb. electrica l characteristics at t a =25c; unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics collector - base cutoff current v cb = 5 v, i e = 0 i cbo - - 100 na collector - emitter cutoff current 1.) v ce = 4.5 v, i b = 1. 0a i cex - - 200 (t.b.d.) a emitter - base cuttoff current v eb = 1.5 v, i c = 0 i ebo - - 50 ? c = 20 ma, v ce = 1 v h fe 50 90 150 - notes: 1.) this test assures v(br) ce0 > 4.5v
bfy450 ifag imm rpd d hir 3 of 4 v2, february 2011 electrical characteristics (conti nued) parameter symbol values unit min. typ. max. ac characteristics transition frequency i c = 90ma, v ce = 3 v, f = 1.0 ghz i c = 90ma, v ce = 3 v, f = 2.0 ghz f t 18 - 22 17 - - ghz collector - base capacitance v cb = 2 v, v be = vbe = 0, f = 1 m hz c cb - 0.42 0.9 pf collector - emitter capacitance v ce = 2 v, v be = vbe = 0, f = 1 mhz c ce - 1.27 2.6 pf emitter - base capacitance v eb = 0.5v, v cb = vcb = 0, f = 1 mhz c eb - 2.0 3 pf noise figure i c = 10 ma, v ce = 2 v, f = 1.8 ghz, z s = z sopt f - 1.25 2.0 db insertion power gain i c = 50 ma, v ce = 2 v, f = 1.8 ghz z s = z l = 50 ? |s 21e | 2 8.0 12 - db power gain i c = 50 ma, v ce = 2 v, f = 1.8 ghz z s = z sopt , z l = z lopt gma 1.) - 16.0 - db 1db compression point i c = 50 ma, v ce = 2 v, f = 1.8 ghz z s = z sopt , z l = z lopt p - 1db - 19 - dbm notes.: 1) , g s s k k ma ? ? ? 21 12 1 2 ( ) g s s ms ? 21 12
bfy450 ifag imm rpd d hir 4 of 4 v2, february 2011 micro - x package edition 20 11 - 0 2 published by infineon technologies ag 85579 neubi berg, germany ? infineon technologies ag 2011 all rights reserved. attention please! the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (beschaffenheitsgarantie). with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warrant ies of non - infringement of intellectual property rights of an third party. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life - support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life - support device or system, or to affect the safety or effecti veness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or ot her persons may be endangered. 1 2 3 4
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